HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD

摘要

An ion implantation system (100) for implanting ions into a workpiece (118) within a process chamber (122) further comprises a load lock chamber (136), and an isolation chamber (146) coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve (150) selectively isolates the pre-implant environment from the process environment wherein the isolation chamber comprises a workpiece support (152) for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas source (159) selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm (164) transfers the workpiece between the various chambers. A controller (166) controls the workpiece transfer arm and selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.