发明名称 |
NANOWIRE BENDING FOR PLANAR DEVICE PROCESS ON (001) Si SUBSTRATES |
摘要 |
Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire. |
申请公布号 |
WO2017023394(A2) |
申请公布日期 |
2017.02.09 |
申请号 |
WO2016US32501 |
申请日期 |
2016.05.13 |
申请人 |
STU.UNM |
发明人 |
LEE, Seung-chang;BRUECK, Steven, R.j. |
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