发明名称 |
RESISTIVE SWITCHING MEMORY HAVING A RESISTOR, DIODE, AND SWITCH MEMORY CELL |
摘要 |
In one embodiment, a semiconductor memory device includes a plurality of resistive switching memory cells, where each resistive switching memory cell can include: (i) a programmable impedance element having an anode and a cathode; (ii) an access transistor having a drain coupled to a bit line, a source coupled to the programmable impedance element cathode, and a gate coupled to a word line; (iii) a well having a first diffusion region configured as the source, a second diffusion region configured as the drain, and a third diffusion region configured as a well contact; and (iv) a diode having a cathode at the second diffusion region, and an anode at the third diffusion region, where the diode is turned on during an erase operation on the programmable impedance element. |
申请公布号 |
WO2017023374(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
WO2016US27198 |
申请日期 |
2016.04.13 |
申请人 |
ADESTO TECHNOLOGIES CORPORATION |
发明人 |
DINH, John;GOPINATH, Venkatesh, P.;GONZALES, Nathan;LEWIS, Derric;KAMALANATHAN, Deepak;KWAN, Ming Sang |
分类号 |
G11C11/00;G11C13/00;G11C16/04;G11C17/16 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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