| 发明名称 |
Substrate Processing Apparatus and Substrate Processing System |
| 摘要 |
Deviation in properties of a semiconductor is suppressed. Provided is a configuration including a receiving member configured to receive data representing a film thickness distribution of a silicon-containing film formed on a substrate, a substrate support where the substrate is placed, a gas supply member configured to supply gases in a manner that a hard mask film having a film thickness distribution different from that of the silicon-containing film is formed on the silicon-containing film to maintain a height of an upper surface of the hard mask film in a predetermined range. |
| 申请公布号 |
US2017040233(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615252400 |
申请日期 |
2016.08.31 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
OHASHI Naofumi;TAKANO Satoshi;KIKUCHI Toshiyuki |
| 分类号 |
H01L21/66;H01L21/321;B24B37/10;H01L21/67;H01L29/66;H01L21/28;H01L21/3213 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) receiving data representing a first film thickness distribution of a polished silicon-containing film formed on a substrate; (b) placing the substrate on a substrate support; and (c) forming on the polished silicon-containing film a hard mask film having a second film thickness distribution different from first film thickness distribution based on the data received in (a). |
| 地址 |
Tokyo JP |
