| 发明名称 |
MATERIAL SELECTIVE REGROWTH STRUCTURE AND METHOD |
| 摘要 |
The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap. |
| 申请公布号 |
US2017040169(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615298005 |
申请日期 |
2016.10.19 |
| 申请人 |
The Texas State University-San Marcos |
发明人 |
Piner Edwin L. |
| 分类号 |
H01L21/02;H01L29/06 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for creating a nanoscale structure, the method comprising:
forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap. |
| 地址 |
San Marcos TX US |
