发明名称 |
P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET |
摘要 |
Described is a tunneling field effect transistor (TFET), comprising: a drain region having a first conductivity type; a source region having a second conductivity type opposite of the first conductivity type; a gate region to cause formation of a channel region between the source and drain regions; and a pocket disposed near a junction of the source region, wherein the pocket region formed from a material having lower percentage of one type of atom than percentage of the one type of atom in the source, channel, and drain regions. |
申请公布号 |
EP3127164(A1) |
申请公布日期 |
2017.02.08 |
申请号 |
EP20140887274 |
申请日期 |
2014.03.27 |
申请人 |
Intel Corporation |
发明人 |
AVCI, Uygar E.;KOTLYAR, Roza;YOUNG, Ian A. |
分类号 |
H01L29/88;H01L21/18;H01L29/78 |
主分类号 |
H01L29/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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