METHOD OF MANUFACTURING A SILICON WAFER

摘要

To provide a silicon wafer which can suppress both occurrences of slip dislocation and warpage in device manufacturing processes and a method of manufacturing the same. A silicon wafer according to the present invention is a silicon wafer having BMDs each having an octahedral shape. BMDs located at a position shallower than the silicon wafer surface by a depth of 20 µm or more and having a diagonal length of 200 nm or more have a concentration of 2 x 10 9 /cm 3 or less, and a BMD located at a position having a depth 50 µm or more and has a diagonal length of 10 nm or more to 50 nm or less has a concentration of 1 x 10 12 /cm 3 or more.