| 摘要 |
PROBLEM TO BE SOLVED: To minimize reduction of oxygen in an insulation film capable of supplying oxygen by heating, and to suppress oxidation of a conductive layer in contact with the insulation film.SOLUTION: In order to minimize reduction of oxygen in an insulation film capable of supplying oxygen by heating, and to suppress oxidation of a conductive layer, a region where oxygen is less likely to be delivered through an interface of the insulation film and the conductive layer is provided in the insulation film. A region containing more nitrogen than the internal is thereby provided near the interface of the insulation film and the conductive layer. Therefor, the surface of the insulation film is subjected to nitriding. In particular, the insulation film is subjected to nitriding, including the sidewall of a contact hole, after forming the contact hole to a conductive layer existing below a transistor using an oxide semiconductor. |
