PLASMA TREATMENT DEVICE AND COIL USED THEREIN

摘要

A plasma etching apparatus includes a chamber having a processing space and a plasma generating space 4 defined therein and a coil 20 wound around the processing chamber, the coil 20 has at least three inward projecting portions 21 formed thereon which project inward in a radial direction with respect to a pitch circle P defined outside a portion of the processing chamber 2 corresponding to the plasma generating space 4, and the at least three inward projecting portions 21 are arranged at equal intervals along a circumferential direction of the pitch circle P.