发明名称 プラズマ処理装置
摘要 Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.
申请公布号 JP6078354(B2) 申请公布日期 2017.02.08
申请号 JP20130011278 申请日期 2013.01.24
申请人 東京エレクトロン株式会社 发明人 網倉 紀彦;実吉 梨沙子
分类号 H05H1/46;C23C16/455;C23C16/509;H01L21/3065;H01L21/31 主分类号 H05H1/46
代理机构 代理人
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