| 摘要 |
The present invention discloses a GAA nanowire semiconductor device and a method for manufacturing such a GAA nanowire semiconductor device. The GAA nanowire semiconductor device comprises a semiconductor substrate (100) having a main surface; a vertical stack of nanowires (101, 1101, 1102) on the substrate; the nanowires having a longitudinal direction parallel to the main surface; the vertical stack comprising at least a first-type nanowire (1101) and at least a second-type nanowire (1102, 160). The first-type nanowire comprises a first material. The second-type nanowire comprises an inner part (1102) and outer parts (160) aside of the inner part and at least the outer parts comprise a second material different from the first material. The first-type nanowire and second-type nanowire comprise a channel region (1101, 1102) being electrically coupled to respective source and drain region (121, 122), the channel region of the second-type nanowire being formed by at least the inner part of the second-type nanowire (1102). The nanowire semiconductor device further comprises a shared gate structure (112) disposed circumferentially around the channel regions of the first-type and second-type nanowires. |
