| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that it is necessary that the thickness of a connection part is double (about 100 μm) or less of the existing solder at least in order to make a thermal resistance of the connection part equal to the thermal resistance of the existing high-lead solder when performing connection using the conventional Zn/Al/Zn clad material, further, it is necessary that the thickness of an Al layer is made thick as much as possible in order to exhibit a stress buffering function of the Al layer satisfactorily, furthermore, it is necessary that pressurization with a load of about 2 g/mm2 or more is performed upon the connection in order to obtain satisfactory connection and, as the result, a mass production cost is remarkably increased.SOLUTION: A semiconductor device includes a semiconductor element, a frame and a connection part which connects the semiconductor element and the frame. Therein, the connection part contains a Zn-Al alloy, and an interface between the connection part and the semiconductor element and an interface between the connection part and the frame have an area of Al oxide film of 0 to 5% with respect to an area of the total interface. |
