发明名称 |
METHOD FOR PRODUCING A DIELECTRIC MAGNETO RESISTOR IN A SUBSTRATE TRENCH, A CORRESPONDING SUBSTRATE, AND A POWER TRANSISTOR |
摘要 |
Substrates comprising a trench with walls and a base are increasingly used for standard components. The invention relates to a substrate characterised in that it comprises a dielectric magneto resistor (83) consisting of at least one first dielectric layer, which only adjoins the lower sections of the trench walls and the base of said trench (60). Parasitic capacitances can be reduced when using this substrate for power transistors. |
申请公布号 |
EP3127161(A1) |
申请公布日期 |
2017.02.08 |
申请号 |
EP20150708232 |
申请日期 |
2015.03.09 |
申请人 |
Robert Bosch GmbH |
发明人 |
TRAUTMANN, Achim;BANZHAF, Christian Tobias |
分类号 |
H01L29/423;H01L21/336;H01L29/739;H01L29/78 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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