发明名称 |
METHOD FOR FORMING SUBSTRATE WITH INSULATING BURIED LAYER |
摘要 |
A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes. |
申请公布号 |
EP2461359(B1) |
申请公布日期 |
2017.02.08 |
申请号 |
EP20100796743 |
申请日期 |
2010.07.10 |
申请人 |
Shanghai Simgui Technology Co., Ltd;Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences |
发明人 |
WANG, Xiang;WEI, Xing;ZHANG, Miao;LIN, Chenglu;WANG, Xi |
分类号 |
H01L21/762;H01L21/304;H01L21/306;H01L21/311 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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