| 摘要 |
A radio-frequency (RF) flip chip device 102 mounted on a silicon die 104, wherein the silicon die has first and second sides that are electronically connected using vias 108, and the first surface is provided with radio frequency circuit. The device may also be provided with wafer level chip scale packaging. The second side of the die may be configured to be mountable in a flip chip manner. The die may be a silicon-on insulator substrate, wherein the insulator layer is interposed between an active silicon layer and the silicon substrate layer. The RF circuit may include a switch circuit, furthermore, it may contain a logic circuit for the switch circuit. It may also include a low-noise amplifier or a power amplifier. The flip chip device may include a radio-frequency filter. The RF circuit may be positioned on or near the first side of the circuit and be coupled to the vias to allow communication between the circuit and the RF flip-chip device mounted on the second side of the substrate. |
