发明名称 半導体装置の製造方法
摘要 A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
申请公布号 JP6076887(B2) 申请公布日期 2017.02.08
申请号 JP20130248099 申请日期 2013.11.29
申请人 株式会社東芝 发明人 五十嵐 純一;佐藤 勝広;平川 雅章
分类号 H01L21/304;H01L21/3065 主分类号 H01L21/304
代理机构 代理人
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