| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance in a display device which has a transistor using an oxide semiconductor, and to achieve high performance and high quality such as improved resolution and high definition in the display device.SOLUTION: In a bottom-gate transistor, a gate electrode provided to be superposed on an oxide semiconductor film is provided by being divided into a first gate electrode and a second gate electrode with a gap therebetween. The first gate electrode is provided to be superposed on one of a source electrode and a drain electrode, and the second gate electrode is provided to be superposed on the other of the source electrode and the drain electrode. |
