| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal suppressed in stacking fault.SOLUTION: The group III nitride crystal 100 includes a group III nitride semiconductor layer 102 formed on a seed crystal 101 which is composed of a group III nitride and the principal plane of which is a semipolar plane or a nonpolar plane where a ratio (&bgr;/α) of emission line density (&bgr;) in a plane parallel to the principal plane of the group III nitride semiconductor layer 102 to emission line density (α) in the principal plane of the seed crystal 101 is 10 or lower or |&bgr;-α| is 50 or lower. |
