发明名称 Method for fabricating a template of conductors on a substrate by means of block copolymers
摘要 The method for fabricating patterns made from first material having: providing a substrate covered by a covering layer, forming a first mask by means of a self-assembled structure of block copolymers, the first mask having first patterns, making a second mask from the first mask, the second mask having a second series of patterns organized according to the first repetition pitch or an integral multiple of the first repetition pitch, the second series having less patterns than the first series, depositing and exposing a resin layer to form an intermediate mask on the first mask, the intermediate mask covering a part of the first patterns formed in the first mask and having second holes facing the first holes, etching the covering layer through the facing first and second holes to form third holes, filling the third holes with a first material to form the patterns made from first material.
申请公布号 US9564328(B2) 申请公布日期 2017.02.07
申请号 US201414760382 申请日期 2014.01.17
申请人 COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 Belledent Jérôme
分类号 H01L21/311;H01L21/033;H01L21/768 主分类号 H01L21/311
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A method for fabricating patterns from a first material comprising the following steps: providing a substrate covered by a covering layer, forming a first mask by means of a self-assembled structure of block copolymers, the first mask defining a first series of first patterns organized with a first repetition pitch, making a second mask from the first mask, the second mask comprising a second series of patterns organized according to the first repetition pitch, the second series of patterns comprising less patterns than the first series of patterns, etching the covering layer through the second mask to define patterns in the covering layer, wherein the substrate comprises devices aligned in a first direction, and wherein a template of first pads is deposited on the covering layer before forming the first mask, the template of first pads being oriented in a second direction secant to the first direction.
地址 Paris FR