Compositions and processes for immersion lithography

摘要

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

主权项

1. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,(ii) a photoactive component, and(iii) one or more materials that are substantially non-mixable with the one or more resins; (b) immersion exposing the photoresist layer to radiation activating for the photoresist composition; and (c) developing the exposed photoresist layer to form a photoresist relief image.