| 发明名称 | Solid state image sensor and method for manufacturing the same | ||
| 摘要 | A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion. | ||
| 申请公布号 | US9564399(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514749954 | 申请日期 | 2015.06.25 |
| 申请人 | CANON KABUSHIKI KAISHA | 发明人 | Aoki Takeshi |
| 分类号 | H01L27/00;H01L23/532;H01L27/146;H01L23/552 | 主分类号 | H01L27/00 |
| 代理机构 | Fitzpatrick, Cella, Harper & Scinto | 代理人 | Fitzpatrick, Cella, Harper & Scinto |
| 主权项 | 1. A method for manufacturing a solid state image sensor, the method comprising: forming an electrically conductive layer and an interlayer insulation film above a semiconductor substrate, the semiconductor substrate having a first region and a second region, photoelectric conversion elements being arranged in the first region and the second region; performing an annealing process after forming the conductive layer and the interlayer insulation film; and forming a protective film above the interlayer insulation film and the electrically conductive layer, wherein the electrically conductive layer includes a light shielding layer arranged above the second region, wherein the interlayer insulation film includes a first portion that is located above the first region and a second portion that is located above the second region and below the light shielding layer, and wherein, before performing the annealing process, the second portion of the interlayer insulation film has an average hydrogen concentration that is higher than an average hydrogen concentration of the first portion of the interlayer insulation film. | ||
| 地址 | Tokyo JP | ||