Semiconductor device and process

摘要

A metal first, via first process for forming interconnects within a metallization layer of a semiconductor device is provided. In an embodiment a conductive material is deposited and the conductive material is patterned into a conductive line and a via. A dielectric material is deposited over the conductive line and the via, and the dielectric material and the via are planarized.

主权项

1. A semiconductor device comprising:
a conductive line over a substrate, wherein the conductive line extends a first distance from the substrate; a via over the substrate, wherein a bottom surface of the via and a bottom surface of the conductive line are substantially planar, wherein the via comprises a first material that extends from the substrate a second distance larger than the first distance; a liner in physical contact with the conductive line, the via, and the substrate, wherein the liner continuously extends from the conductive line to the via, wherein the liner has a thickness of between about 50 Å to about 500 Å; and a dielectric over the conductive line and between the conductive line and the via, wherein the dielectric comprises a first material that extends throughout the dielectric.