Marker pattern for enhanced failure analysis resolution

摘要

A marker pattern for enhancing resolution of a defect location along an axis in semiconductor defect analysis, and in particular, a marker pattern providing greater resolution in locating bit line defects using thermal laser stimulation methods such as OBIRCH. In an example, the marker pattern may consist of large markers, each having a set of associated small markers. Each of the small markers may be offset along an axis from each other. By identifying the small marker and its associated large marker which align with the defect, the bit line containing the defect may be more easily identified.

主权项

1. A system for enhancing resolution of a defect location along an axis in semiconductor defect analysis employing a thermal laser stimulation system, comprising:
a marker pattern positioned adjacent an integrated circuit, the marker pattern comprising a plurality of markers, oriented in a row, markers in the row offset from each other along the axis, the markers in the marker pattern enhancing resolution of the defect location by determining alignment of an image of the defect with an image of a marker in the marker pattern; wherein the marker pattern comprises large markers and small markers, a group of small markers grouped to a large marker, a defect aligning with a small marker and identified by the small marker and large marker to which the small marker is grouped.