Dual liner silicide

摘要

A method for fabricating a dual silicide device includes growing source and drain (S/D) regions for an N-type device, forming a protection layer over a gate structure and the S/D regions of the N-type device and growing S/D regions for a P-type device. A first dielectric layer is conformally deposited and portions removed to expose the S/D regions. Exposed S/D regions for the P-type device are silicided to form a liner. A second dielectric layer is conformally deposited. A dielectric fill is formed over the second dielectric layer. Contact holes are opened through the second dielectric layer to expose the liner for the P-type device and expose the protection layer for the N-type device. The S/D regions for the N-type device are exposed by opening the protection layer. Exposed S/D regions adjacent to the gate structure are silicided to form a liner for the N-type device. Contacts are formed.

主权项

1. A method for fabricating a dual silicide device, comprising:
growing source and drain regions adjacent to a gate structure for an N-type device; forming a protection layer over the gate structure and the source and drain regions of the N-type device; growing source and drain regions adjacent to a gate structure for a P-type device; conformally depositing a first dielectric layer on the gate structure for the N-type device and the gate structure for P-type device; removing the first dielectric layer to expose the source and drain regions adjacent to the gate structure for the P-type device; siliciding exposed source and drain regions adjacent to the gate structure for the P-type device to form a silicided liner for the P-type device; conformally depositing a second dielectric layer on the gate structure for the N-type device and the gate structure for P-type device; forming a dielectric fill over the second dielectric layer; opening contact holes in the dielectric fill and through the second dielectric layer to expose the silicided liner for the P-type device and expose the protection layer for the N-type device; exposing the source and drain regions adjacent to the gate structure for the N-type device by opening the protection layer; siliciding exposed source and drain regions adjacent to the gate structure for the N-type device to form a silicided liner for the N-type device; and forming contacts in the contact holes down to the silicided liners of the P-type device and the N-type device.