| 发明名称 | Cyclic epitaxial deposition and etch processes | ||
| 摘要 | A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion of the deposited epitaxial layer at a variable temperature higher than the first temperature. The step of etching is performed while varying the temperature. | ||
| 申请公布号 | US9564321(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201313792261 | 申请日期 | 2013.03.11 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Tsai Chun Hsiung;Liu Meng-Yueh;Su Chien-Chang;Chao Yuan-Feng;Fan Yuh-Da |
| 分类号 | H01L21/20;H01L21/36;H01L21/02;H01L21/3065 | 主分类号 | H01L21/20 |
| 代理机构 | Duane Morris LLP | 代理人 | Duane Morris LLP |
| 主权项 | 1. A cyclic deposition and etch method, comprising: depositing an epitaxial layer over a substrate at a first temperature in a reactor chamber; after performing the depositing step, raising the temperature in the reactor chamber from the first temperature and at a predetermined temperature ramping rate while maintaining the substrate in the reactor chamber; and etching a portion of the deposited epitaxial layer while performing the step of raising the temperature in the reactor chamber. | ||
| 地址 | Hsin-Chu TW | ||