Large area nitride crystal and method for making it

摘要

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

主权项

1. A gallium-containing nitride merged crystal made from a process comprising:
depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature;
while said adhesion layer is at a temperature of no less than said first temperature to melt said adhesion layer to enhance its adhesion, bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate, said first crystal having a first nominal crystallographic orientation (x1 y1 z1), and said second crystal having a second nominal crystallographic orientation (x2 y2 z2), said first nominal crystallographic orientation (x1 y1 z1) and said second nominal crystallographic orientation (x2 y2 z2) being identical; and after said first and second crystals are adhered to said adhesion layer, heat treating said adhesion layer to form a heat-treated adhesion layer, said heat-treated adhesion layer having a melting point at a second temperature higher than said first temperature;laterally and vertically growing a crystalline composition over said tiled substrate using ammonothermal growth at a third temperature to form a merged crystal, said third temperature being higher than said first temperature and below said second temperature, wherein said first and second crystals define first and second domains in said merged crystal.