发明名称 |
Method for preparing a silicon dioxide substrate-based graphene transparent conductive film |
摘要 |
The present invention provides a method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which comprises: preparing a silicon dioxide substrate on a graphene transparent conductive film, thereby obtaining a silicon dioxide substrate-based graphene transparent conductive film. In the method for preparing a silicon dioxide substrate-based graphene transparent conductive film according to the embodiments of the present invention, the silicon dioxide substrate is prepared on the graphene transparent conductive film, and a graphene transferring step that is difficult to implement in the prior art can be avoided, thus the silicon dioxide substrate-based graphene transparent conductive film can be prepared conveniently, and the cost may be reduced at the same time. |
申请公布号 |
US9564260(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201414445589 |
申请日期 |
2014.07.29 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Shi Yue |
分类号 |
H01L21/31;C01B31/04;C23C16/01;H01B13/00;C23C16/26;C23C16/44;C23F1/00;H01B13/30;C23C16/56;C23C18/12;H01B1/04 |
主分类号 |
H01L21/31 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film,
wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film. |
地址 |
Beijing CN |