发明名称 Method for preparing a silicon dioxide substrate-based graphene transparent conductive film
摘要 The present invention provides a method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which comprises: preparing a silicon dioxide substrate on a graphene transparent conductive film, thereby obtaining a silicon dioxide substrate-based graphene transparent conductive film. In the method for preparing a silicon dioxide substrate-based graphene transparent conductive film according to the embodiments of the present invention, the silicon dioxide substrate is prepared on the graphene transparent conductive film, and a graphene transferring step that is difficult to implement in the prior art can be avoided, thus the silicon dioxide substrate-based graphene transparent conductive film can be prepared conveniently, and the cost may be reduced at the same time.
申请公布号 US9564260(B2) 申请公布日期 2017.02.07
申请号 US201414445589 申请日期 2014.07.29
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Shi Yue
分类号 H01L21/31;C01B31/04;C23C16/01;H01B13/00;C23C16/26;C23C16/44;C23F1/00;H01B13/30;C23C16/56;C23C18/12;H01B1/04 主分类号 H01L21/31
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film, wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.
地址 Beijing CN