Photomask, method of manufacturing photomask and exposure apparatus

摘要

On a photomask used for exposure processing, a plurality of pattern regions on which predetermined patterns are formed using a light shielding material are provided, and calibration marks are formed at positions corresponding to at least two opposite sides of each pattern region. During exposure processing, a deformation state of the photomask is detected based on calibration marks formed on the photomask and marks formed on a substrate stage, and a projection condition for projecting a pattern formed on the photomask on the substrate is corrected based on the detection result.

主权项

1. A photomask including a plurality of pattern regions having patterns formed with a light shielding material, and transferring the patterns to a photoresist with light passed through the pattern regions, wherein
each of the pattern regions has a rectangular shape; the photomask includes marks at positions corresponding respectively to two opposite sides of each of the pattern regions; and at least one of the pattern regions has a shape and size different from shapes and sizes of the other pattern regions.