Three-dimensional semiconductor memory devices and methods of fabricating the same

摘要

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.

主权项

1. A semiconductor memory device comprising:
a semiconductor structure extending in a first direction; an electrode on the semiconductor structure, the electrode extending in a second direction that is perpendicular to the first direction; an insulating layer on the semiconductor structure, the insulating layer on the electrode and extending in the second direction; and a tunneling layer, a charge storage layer, a capping layer, and a blocking layer, respectively between the semiconductor structure and the electrode,
the blocking layer between the electrode and the capping layer,the capping layer extending a first length in the first direction along a side surface of the insulating layer,the blocking layer extending a second length in the first direction, andthe first length is larger than the second length.