发明名称 Package carrier, semiconductor package, and process for fabricating same
摘要 A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments.
申请公布号 US9564346(B2) 申请公布日期 2017.02.07
申请号 US201615088683 申请日期 2016.04.01
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 Su Yuan-Chang;Huang Shih-Fu;Chen Chia-Cheng
分类号 H01L21/48;H01L21/683;H01L23/31;H01L23/498;H01L23/00 主分类号 H01L21/48
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP ;Liu Cliff Z.
主权项 1. A semiconductor fabrication process, comprising: (a) forming a first conductive pattern adjacent to a carrier; (b) forming a plurality of first conductive post segments on the first conductive pattern; and (c) applying a dielectric layer to the first conductive pattern and exposing the first conductive post segments, wherein (c) includes: (c1) applying a dielectric layer to cover the first conductive pattern and the first conductive post segments;(c2) forming a plurality of openings in the dielectric layer, such that the first conductive post segments are exposed by the openings; and(c3) forming a plurality of second conductive post segments on the first conductive post segments and at least partially within the openings;wherein a diameter of each opening is smaller than a diameter of the corresponding first conductive post segment such that the diameter of each second conductive post segment is smaller than the diameter of the corresponding first conductive post segment.
地址 Kaohsiung TW