发明名称 |
Package carrier, semiconductor package, and process for fabricating same |
摘要 |
A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments. |
申请公布号 |
US9564346(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201615088683 |
申请日期 |
2016.04.01 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
Su Yuan-Chang;Huang Shih-Fu;Chen Chia-Cheng |
分类号 |
H01L21/48;H01L21/683;H01L23/31;H01L23/498;H01L23/00 |
主分类号 |
H01L21/48 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP ;Liu Cliff Z. |
主权项 |
1. A semiconductor fabrication process, comprising:
(a) forming a first conductive pattern adjacent to a carrier; (b) forming a plurality of first conductive post segments on the first conductive pattern; and (c) applying a dielectric layer to the first conductive pattern and exposing the first conductive post segments, wherein (c) includes:
(c1) applying a dielectric layer to cover the first conductive pattern and the first conductive post segments;(c2) forming a plurality of openings in the dielectric layer, such that the first conductive post segments are exposed by the openings; and(c3) forming a plurality of second conductive post segments on the first conductive post segments and at least partially within the openings;wherein a diameter of each opening is smaller than a diameter of the corresponding first conductive post segment such that the diameter of each second conductive post segment is smaller than the diameter of the corresponding first conductive post segment. |
地址 |
Kaohsiung TW |