发明名称 Memory system and user device including the same
摘要 In one embodiment, the method includes receiving a read request for reading data from a memory area of the memory, and determining whether an identifier of the memory area is stored in one of the plurality of entries of a characteristic table. Each of the plurality of entries is associated with a different range of at least one memory area characteristic and each of the plurality of entries is associated with different read condition information. The method further includes obtaining the read condition information associated with the entry storing the identifier of the memory area if the determining determines the identifier is stored in one of the plurality of entries of the characteristic table, and controlling the memory to read data from the memory area using the obtained read condition information.
申请公布号 US9564241(B2) 申请公布日期 2017.02.07
申请号 US201414466187 申请日期 2014.08.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kwak Donghun;Park Kitae
分类号 G06F12/12;G11C16/34;G11C16/04;G11C16/26;G06F3/06;G06F12/02 主分类号 G06F12/12
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method of reading from a memory, comprising: receiving a read request for reading data from a memory area of the memory; determining whether an identifier of the memory area is stored in one of the plurality of entries of a characteristic table, each of the plurality of entries associated with a different range of at least one memory area characteristic and each of the plurality of entries associated with different read condition information; and obtaining the read condition information associated with the entry storing the identifier of the memory area if the determining determines the identifier is stored in one of the plurality of entries of the characteristic table; and controlling the memory to read data from the memory area using the obtained read condition information, wherein the memory area characteristic is a duration or a time since the memory area was last programmed and the read condition information includes driving voltages for conducting a read operation, wherein the memory includes a plurality of memory cell strings, and each of the memory cell strings includes a plurality of memory cells stacked in a direction perpendicular to a substrate.
地址 Gyeonggi-Do KR