发明名称 |
Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer |
摘要 |
A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E-4 [J] or higher is introduced into the growth furnace. |
申请公布号 |
US9564315(B1) |
申请公布日期 |
2017.02.07 |
申请号 |
US201615091421 |
申请日期 |
2016.04.05 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
Ohno Akihito;Sakai Masashi;Mitani Yoichiro;Yamamoto Takahiro;Kimura Yasuhiro;Mizobe Takuma;Tomita Nobuyuki |
分类号 |
H01L21/02;C23C16/455;C23C16/44;B08B9/093 |
主分类号 |
H01L21/02 |
代理机构 |
Studebaker & Brackett PC |
代理人 |
Studebaker & Brackett PC |
主权项 |
1. A manufacturing method for manufacturing a silicon carbide epitaxial wafer comprising:
introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E-4 [J] or higher is introduced into the growth furnace, and wherein the cleaning gas includes only an inert gas, only hydrogen, or only a combination of an inert gas and hydrogen. |
地址 |
Tokyo JP |