发明名称 Post-silicon tuning in voltage control of semiconductor integrated circuits
摘要 A circuit is disclosed that includes a plurality of voltage control circuits and a control module. Each of the voltage control circuits is controlled by a control signal. The control module is configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data and second predetermined data.
申请公布号 US9564896(B2) 申请公布日期 2017.02.07
申请号 US201414296042 申请日期 2014.06.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Kao Jerry Chang-Jui;Chao Chien-Ju;Lin Chin-Shen;Katta Nitesh;Yang Kuo-Nan;Wang Chung-Hsing
分类号 H03K19/00;H02M3/157;H02M3/155;H02M1/00;H02M3/156 主分类号 H03K19/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A circuit, comprising: a plurality of voltage control circuits, wherein each of the voltage control circuits is configured to generate a driving voltage and an inrush current to a corresponding functional circuit according to a control signal; and a control module configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data associated with a maximum value of the inrush current, and second predetermined data associated with a minimum time for the driving voltage meeting a target level.
地址 Hsinchu TW