发明名称 |
Post-silicon tuning in voltage control of semiconductor integrated circuits |
摘要 |
A circuit is disclosed that includes a plurality of voltage control circuits and a control module. Each of the voltage control circuits is controlled by a control signal. The control module is configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data and second predetermined data. |
申请公布号 |
US9564896(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201414296042 |
申请日期 |
2014.06.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Kao Jerry Chang-Jui;Chao Chien-Ju;Lin Chin-Shen;Katta Nitesh;Yang Kuo-Nan;Wang Chung-Hsing |
分类号 |
H03K19/00;H02M3/157;H02M3/155;H02M1/00;H02M3/156 |
主分类号 |
H03K19/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A circuit, comprising:
a plurality of voltage control circuits, wherein each of the voltage control circuits is configured to generate a driving voltage and an inrush current to a corresponding functional circuit according to a control signal; and a control module configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data associated with a maximum value of the inrush current, and second predetermined data associated with a minimum time for the driving voltage meeting a target level. |
地址 |
Hsinchu TW |