Doping an absorber layer of a photovoltaic device via diffusion from a window layer

摘要

Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

主权项

1. A method of doping an absorbent layer in a thin film photovoltaic device, the method comprising:
depositing a window layer on a transparent substrate, wherein the window layer comprises a dopant; forming a p-n heterojunction on the window layer such that the window layer is positioned between the p-n heterojunction and the transparent substrate, wherein the p-n heterojunction comprises an absorber layer, and wherein the absorber layer comprises a photovoltaic material; diffusing the dopant from the window layer into the absorber layer; and forming a back contact layer directly on the absorber layer.