Integrated circuit structure and method with solid phase diffusion

摘要

The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate; a channel region of a first type conductivity, defined in the fin active region and having a first carrier concentration; and an anti-punch through (APT) feature of the first type conductivity, wherein the APT feature is formed in the semiconductor substrate, is directly underlying the channel region, and has a second carrier concentration greater than the first carrier concentration.

主权项

1. A semiconductor structure comprising:
a fin active region including a first fin element and a second fin element formed on a semiconductor substrate; a channel region of a first type conductivity, defined in the fin active region and having a first carrier concentration; and an anti-punch through (APT) feature of the first type conductivity, wherein the APT feature is formed in the semiconductor substrate, and is underlying the channel region,
wherein the APT feature has a second carrier concentration greater than the first carrier concentration, and continuously extends from a first sidewall of the first fin element to a second sidewall of the second fin element; and a first dielectric material feature formed on the semiconductor substrate and disposed on sidewalls of the first and second fin elements, wherein the first dielectric material feature includes:
a dopant-containing silicate glass layer including a first type dopant formed over the semiconductor substrate; andan un-doped silicate glass layer over the dopant-containing silicate glass layer, wherein a top surface of the un-doped silicate glass layer has a concave profile.