| 发明名称 |
Schottky diodes for replacement metal gate integrated circuits |
| 摘要 |
An integrated circuit and method with a metal gate transistor and with a Schottky diode where the metal used to form the Schottky diode is the metal used to form the metal gate. |
| 申请公布号 |
US9564427(B2) |
申请公布日期 |
2017.02.07 |
| 申请号 |
US201614996360 |
申请日期 |
2016.01.15 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Nandakumar Mahalingam |
| 分类号 |
H01L27/06;H01L29/49;H01L29/872;H01L29/47;H01L29/66;H01L29/36 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
Garner Jacqueline J.;Brill Charles A.;Cimino Frank D. |
| 主权项 |
1. An integrated circuit, comprising:
a transistor with a metal gate formed of near band edge work function material; a Schottky diode formed between a Schottky metal and a substrate of the integrated circuit wherein the Schottky metal and the metal gate are the same metal. |
| 地址 |
Dallas TX US |
