| 发明名称 | Magnetic shielding of perpendicular STT-MRAM | ||
| 摘要 | A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks. | ||
| 申请公布号 | US9564403(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201314038959 | 申请日期 | 2013.09.27 |
| 申请人 | Infineon Technologies AG | 发明人 | Allinger Robert;Hofmann Karl;Knobloch Klaus;Strenz Robert |
| 分类号 | H01L27/22;H01L23/552;H01L43/12;H01L43/02;H01L43/08 | 主分类号 | H01L27/22 |
| 代理机构 | Schiff Hardin LLP | 代理人 | Schiff Hardin LLP |
| 主权项 | 1. A memory comprising: an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack; a magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks to thereby shield the cells from memory-external magnetic fields; and an isolation layer disposed directly on the magnetic shield and a top electrode. | ||
| 地址 | Neubiberg DE | ||