Method for thinning, metalizing, and dicing a semiconductor wafer, and semiconductor device made using the method

摘要

There is provided a method of fabricating a semiconductor device, method including: a) forming semiconductor elements in plural element regions surrounded by assumed dicing lines on a first principal surface of a semiconductor wafer; b) grinding the second principal surface in such a way that an outer peripheral portion of a second principal surface on the opposite side of the first principal surface of the semiconductor wafer becomes thicker than an inner peripheral portion of the second principal surface; c) forming a metal film, in such a way as to avoid sections corresponding to the dicing lines, on the second principal surface that has been ground in the grinding step; and d) cutting the semiconductor wafer from the second principal surface side along portions where the metal film is not formed on the dicing lines.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a first principal surface, a second principal surface opposing the first principal surface, and a side surface, the first principle surface having a rectangular shape with four sides and having a semiconductor element, and the second principal surface also having a rectangular shape with four sides, the side surface of the substrate being formed by dicing to connect the sides of the first principal surface with corresponding sides of the second principal surface; and a conductive film on the second principal surface formed in direct contact with a diffusion layer formed on the second principal surface, the conductive film being disposed so as to cover an entire surface of the second principal surface except an outer edge portion of the second principal surface, wherein the outer edge portion includes the four sides of the second principal surface, wherein the semiconductor element is formed in a semiconductor element formation region, the semiconductor formation region being a region of the first principal surface corresponding to a region where the conductive film is disposed on the second principal surface in plan view of the first principal surface, wherein the semiconductor element comprises an electrode connected to the first principal surface.