| 发明名称 | Self-forming metal barriers | ||
| 摘要 | A technique includes applying a liquid dielectric composition onto a substrate, where the composition includes metal ions, at least partially curing the composition to form a dielectric layer with the metal ions, patterning the dielectric layer to form electron-rich regions at a surface thereof, heating the patterned dielectric layer to drive the metal ions to the electron-rich regions thereof, thereby forming a metal barrier layer on at least a portion of the surface of the dielectric layer, and depositing one or more metal layers onto the metal barrier layer. | ||
| 申请公布号 | US9564356(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514688549 | 申请日期 | 2015.04.16 |
| 申请人 | International Business Machines Corporation | 发明人 | Deline Vaughn R.;Dubois Geraud J.;Volksen Willi |
| 分类号 | B05D5/12;H01L21/00;H01L21/768;H05K3/40;H05K3/10;H05K3/42;H05K3/46;H05K3/12;H01L23/522 | 主分类号 | B05D5/12 |
| 代理机构 | Shumaker & Sieffert, P.A. | 代理人 | Shumaker & Sieffert, P.A. |
| 主权项 | 1. A method, comprising: applying a liquid dielectric composition onto a substrate, wherein the composition comprises metal ions; at least partially curing the composition to form a dielectric layer with the metal ions; patterning the dielectric layer to form electron-rich regions at a surface thereof; heating the patterned dielectric layer to drive the metal ions to the electron-rich regions thereof, thereby forming a metal barrier layer on at least a portion of the surface of the dielectric layer; and depositing one or more metal layers onto the metal barrier layer. | ||
| 地址 | Armonk NY US | ||