Method for fabricating semiconductor device including isolation layer

摘要

A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

主权项

1. A method for fabricating an isolation layer, comprising:
forming a trench in a substrate; forming a first oxide layer in the trench; and forming a second oxide layer by oxidizing the first oxide layer; and forming a third oxide layer by oxidizing the substrate adjacent to the trench when the second oxide layer is formed.