Methods for processing bevel edge etching

摘要

The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

主权项

1. A method of cleaning a bevel edge of a substrate in an processing chamber, comprising:
placing a substrate on a substrate support in the processing chamber, the processing chamber includes an insulator plate that is disposed over the substrate support and during cleaning is maintained at a distance that is less than 1 mm apart; connecting the substrate support to a resistor that is set to maintain a resistance that is greater than about 1 Mohm; flowing a cleaning gas into the processing chamber via a center gas feed in the substrate support so that the cleaning gas flows from a center of the substrate support toward a periphery of the substrate support; and generating a cleaning plasma using the cleaning gas near the bevel edge of the substrate to cause etching of the bevel edge, the cleaning plasma being generated by powering a bottom edge electrode with a RF power source and by grounding a top edge electrode that surrounds the insulator plate and opposes the substrate support, the bottom edge electrode surrounds the substrate support, the bottom edge electrode and the substrate support being electrically isolated from one another by a bottom dielectric ring, the resistor being set to greater than about 1 Mohm is configured to prevent drawing RF power to the substrate support from the RF power source coupled to the bottom edge electrode, wherein a surface of the bottom edge electrode facing the substrate is coated with a bottom thin dielectric layer, wherein a surface of the top edge electrode facing the substrate is coated with a top thin dielectric layer.