MRAM device and fabrication method

摘要

A magnetoresistive random access memory (MRAM) device comprises a bottom electrode over a tapered bottom via, a tapered magnetic tunnel junction (MTJ) over the bottom electrode, a top electrode over the MTJ, and a top via over the top electrode. The top via, top electrode, MTJ, bottom electrode, and bottom via (and electrical interfaces therebetween) are substantially aligned along a common vertical axis. The bottom via has a taper angle of about 120° to about 150°. The MTJ has a taper angle of about 70° to about 85°. The MTJ is isolated and protected with dual sidewall spacers.

主权项

1. A magnetoresistive random access memory (MRAM) device, comprising:
a bottom electrode over a conductive via, the conductive via having a first tapered sidewall; a magnetic tunnel junction (MTJ) over the bottom electrode, the MTJ having a second tapered sidewall; a top electrode over the MTJ; a first dielectric material adjacent to the top electrode and the MTJ; and a second dielectric material adjacent to at least a portion of the first dielectric material, wherein the first dielectric material and the second dielectric material comprise different material layers, and at least a portion of a first sidewall of the first dielectric material distally disposed from the top electrode is substantially adjoined with a second sidewall of the second dielectric material distally disposed from the top electrode.