发明名称 |
Semiconductor memory device having integrated DOSRAM and NOSRAM |
摘要 |
A semiconductor memory device includes a semiconductor substrate having a main surface, at least a first dielectric layer on the main surface of the semiconductor substrate, a first OS FET device and a second OS FET device disposed on the first dielectric layer, at least a second dielectric layer covering the first dielectric layer, the first OS FET device, and the second OS FET device, a first MIM capacitor on the second dielectric layer and electrically coupled to the first OS FET device, and a second MIM capacitor on the second dielectric layer and electrically coupled to the second OS FET device. |
申请公布号 |
US9564217(B1) |
申请公布日期 |
2017.02.07 |
申请号 |
US201514886116 |
申请日期 |
2015.10.19 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Zhou Zhibiao;Lin Chen-Bin;Ku Chi-Fa;Wu Shao-Hui |
分类号 |
H01L27/10;H01L29/04;H01L29/24;H01L29/66;H01L29/78;G11C14/00;H01L29/786;H01L27/108;H01L27/105 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A semiconductor memory device, comprising:
a semiconductor substrate having a main surface; at least a first dielectric layer on the main surface of the semiconductor substrate; a first oxide semiconductor field effect transistor (OS FET) device disposed on the first dielectric layer; a second OS FET device disposed on the first dielectric layer; at least a second dielectric layer covering the first dielectric layer, the first OS FET device, and the second OS FET device; a first metal-insulator-metal (MIM) capacitor on the second dielectric layer and electrically coupled to the first OS FET device, thereby constituting a dynamic oxide semiconductor random access memory (DOSRAM) cell, wherein the first MIM capacitor comprises a first bottom plate (BP) in a first capacitor trench, a first high-k dielectric layer on the first BP, and a first top plate (TP) on the first high-k dielectric layer; and a second MIM capacitor on the second dielectric layer and electrically coupled to the second OS FET device, thereby constituting a non-volatile oxide semiconductor random access memory (NOSRAM) cell. |
地址 |
Hsin-Chu TW |