| 发明名称 | Semiconductor device and method of manufacturing semiconductor device | ||
| 摘要 | A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step. | ||
| 申请公布号 | US9564503(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201615014427 | 申请日期 | 2016.02.03 |
| 申请人 | Sumitomo Electric Device Innovations, Inc. | 发明人 | Nishi Masahiro |
| 分类号 | H01L21/338;H01L29/45;H01L21/285;H01L29/417;H01L29/423;H01L29/66;H01L29/20;H01L21/02;H01L21/283;H01L21/306;H01L21/324;H01L21/3213;H01L21/768 | 主分类号 | H01L21/338 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Sartori Michael A.;Remus Laura G. |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: a first step of forming a first electrode containing Ti or Ta on a top face of a nitride semiconductor layer; a second step of forming a second electrode containing Al on a top face of the first electrode; a third step of forming a coating metal layer covering at least one of an edge of a top face of the second electrode and a side face of the second electrode, having a window exposing the top face of the second electrode in a region separated from the edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; a fourth step of forming a wiring layer on the top face of the second electrode exposed from the coating metal layer. | ||
| 地址 | Yokohama-shi JP | ||