发明名称 |
Etch resistant alumina based coatings |
摘要 |
Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminum oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate. |
申请公布号 |
US9564339(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201013638075 |
申请日期 |
2010.03.29 |
申请人 |
Pibond Oy |
发明人 |
Rantala Juha T.;Gädda Thomas;Li Wei-Min;Thomas David A.;McLaughlin William |
分类号 |
H01L21/311;H01L21/308;C23C18/12 |
主分类号 |
H01L21/311 |
代理机构 |
McCormick, Paulding & Huber LLP |
代理人 |
McCormick, Paulding & Huber LLP |
主权项 |
1. A method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of a polymer, said solution or dispersion being obtained by the steps consisting of hydrolysis and condensation of monomers of aluminum isopropoxide in a solvent or a solvent mixture in the presence of water and a catalyst to form an alumina polymer, followed by combining the alumina polymer with a silane polymer formed by hydrolysis and condensation of glycidoxypropylsilane, wherein the molar ratio of Al:Si is 7.5:2.5. |
地址 |
Espoo FI |