发明名称 |
Hardmask |
摘要 |
This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions. |
申请公布号 |
US9563126(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201514925147 |
申请日期 |
2015.10.28 |
申请人 |
Rohm and Haas Electronic Materials LLC |
发明人 |
Yamada Shintaro;Wang Deyan;Wong Sabrina;Liu Cong;Xu Cheng-Bai |
分类号 |
G03F7/09;G03F7/20;G03F7/30;G03F7/36;G03F7/40;G03F7/16;C09B57/10;C09B69/10;C08G79/00;C08K5/00;C08K5/56;H01L21/027;H01L21/033 |
主分类号 |
G03F7/09 |
代理机构 |
|
代理人 |
Cairns S. Matthew |
主权项 |
1. A method comprising: providing a substrate; coating a film of the composition comprising: an organometallic compound of the formulawherein R2═(C1-C20)hydrocarbyl; M1 is a Group 3 to Group 14 metal; G=R3b-Ch-R3b or Ch(OM1L1mOR2)c; Ch=a chromophore moiety; R3 is a divalent linking group having from 1 to 12 carbon atoms; R4═H, R2 or M(L1)mOR2; L1 is a ligand; m refers to the number of ligands and is an integer from 1-4; a=an integer from 1 to 20; each b is independently an integer from 0 to 25; c=1 or 2; and an organic solvent on a surface of the substrate; curing the film under conditions sufficient to form a metal hardmask layer comprising the chromophore moiety; disposing a layer of a photoresist on the cured metal hardmask layer; and exposing the photoresist by to patterned radiation to form an image. |
地址 |
Marlborough MA US |