| 发明名称 | Method of forming a protective coating for a packaged semiconductor device | ||
| 摘要 | A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first semiconductor substrate. The lift-off layer is patterned so as to form openings in the lift-off layer that are arranged on either side of a first portion of the lift-off layer. The first substrate is connected together with a second substrate by an interconnect structure to form an assembly with the main surface of the first semiconductor substrate being exposed. Exposed surfaces of the assembly are coated with a parylene coating, with a first portion of the parylene coating being supported by the first portion of the lift-off layer. The first portion of the parylene coating is selectively removed using a lift-off technique that removes the first portion of the lift-off layer. The lift-off technique is performed after connecting the first substrate and second substrates together. | ||
| 申请公布号 | US9561953(B1) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514833871 | 申请日期 | 2015.08.24 |
| 申请人 | Infineon Technologies AG | 发明人 | Elian Klaus;Theuss Horst |
| 分类号 | H01L21/00;B81C1/00;H01L21/56;B81B7/00 | 主分类号 | H01L21/00 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method of packaging a semiconductor device, the method comprising: providing a first semiconductor substrate comprising at least one integrated semiconductor device; forming a lift-off layer on a main surface of the first semiconductor substrate; patterning the lift-off layer so as to form openings in the lift-off layer that are arranged on either side of a first portion of the lift-off layer; connecting the first substrate together with a second substrate by an interconnect structure with the main surface of the first semiconductor substrate being exposed; coating exposed surfaces of the first and second substrates and the interconnect structure with a parylene coating, a first portion of the parylene coating being supported by the first portion of the lift-off layer; and selectively removing the first portion of the parylene coating using a lift-off technique that removes the first portion of the lift-off layer, wherein the lift-off technique is performed after connecting the first substrate and second substrates together. | ||
| 地址 | Neubiberg DE | ||