Device isolation with improved thermal conductivity

摘要

A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.

主权项

1. A method of making a semiconductor structure, comprising:
forming a shallow trench isolation (STI) structure in a substrate; forming a barrier layer on and contacting the STI structure and the substrate, wherein the barrier layer is composed of nitride or oxynitride; forming an insulator layer on and contacting the barrier layer; forming a trench through the STI structure and into the substrate; forming a liner comprising an electrical insulator material on sidewalls and a bottom of the of the trench; forming a core comprising a high thermal conductivity material in the trench and on the liner, wherein the liner is between the core and the substrate across the bottom of the trench; and forming a cap in the trench and on the core, wherein the forming the trench comprises:
forming the trench with a first etch through the insulator layer, the barrier layer, and the STI structure using a photoresist as a mask;stripping the photoresist after the first etch; andafter the stripping, extending the trench into the substrate with a second etch using the insulator layer as a mask.