| 发明名称 | Substrate opening formation in semiconductor devices | ||
| 摘要 | Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over an oxide layer, forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, electrically coupling an electrical element to the FET via the one or more electrical connections, disposing a handle wafer layer on at least a portion of the one or more dielectric layers, the handle wafer layer being at least partially over the electrical element; and removing at least a portion of the handle wafer layer to form an opening exposing at least a portion of the electrical element. | ||
| 申请公布号 | US9564405(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201615154864 | 申请日期 | 2016.05.13 |
| 申请人 | Skyworks Solutions, Inc. | 发明人 | Mason Jerod F.;Bartle Dylan Charles;Whitefield David Scott |
| 分类号 | H01L21/00;H01L23/00;H01L21/768;H01L29/06;H01L23/528;H01L21/683;H01L21/762;H01L29/78;H04B1/40 | 主分类号 | H01L21/00 |
| 代理机构 | Chang & Hale LLP | 代理人 | Chang & Hale LLP |
| 主权项 | 1. A method of fabricating a radio-frequency device comprising: providing a field-effect transistor formed over an oxide layer; forming one or more electrical connections to the field-effect transistor; forming one or more dielectric layers over at least a portion of the electrical connections; electrically coupling an electrical element to the field-effect transistor via the one or more electrical connections; disposing a handle wafer layer on at least a portion of the one or more dielectric layers, the handle wafer layer being at least partially over the electrical element; and removing at least a portion of the handle wafer layer to form an opening exposing at least a portion of the electrical element. | ||
| 地址 | Woburn MA US | ||