Low-K dielectric layer and porogen

摘要

A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.

主权项

1. A semiconductor device comprising:
a substrate; a first dielectric layer over the substrate, the first dielectric layer having a hardness of greater than 2 GPa and a k-value of less than about 2.6; and a second dielectric layer between the substrate and the first dielectric layer, wherein the second dielectric layer has a greater adhesion than the first dielectric layer.